2SK3541T2L(2013) データシートの表示（PDF） - ROHM Semiconductor
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2SK3541T2L Datasheet PDF : 4 Pages
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Transistor
2.5V Drive Nch MOS FET
2SK3541
2SK3541
zStructure
Silicon N-channel
MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zExternal dimensions (Unit : mm)
VMT3
(1)Gate
(2)Source
(3)Drain
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : KN
zPackaging specifications
Package
Taping
Type
Code
Basic ordering unit
(pieces)
T2L
8000
2SK3541
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±100
mA
Drain current
Pulsed
IDP∗1
±400
mA
Total power dissipation
PD∗2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zEquivalent circuit
Drain
Gate
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Rev.B
1/3
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