2SK3541T2R データシートの表示（PDF） - ROHM Semiconductor

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2SK3541T2R

Small switching (30V/ 0.1A)

ROHM Semiconductor 

Transistor

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Gate-source leakage

IGSS

−

Drain-source breakdown voltage V(BR)DSS 30

Zero gate voltage drain current

IDSS

−

Gate threshold voltage

VGS(th)

0.8

Static drain-source on-state

RDS(on)

−

resistance

RDS(on)

−

Forward transfer admittance

Input capacitance

|Yfs|

20

Ciss

−

Output capacitance

Coss

−

Reverse transfer capacitance

Crss

−

Turn-on delay time

td(on)

−

Rise time

tr

−

Turn-off delay time

td(off)

−

Fall time

tr

−

Typ.

−

−

−

−

5

7

−

13

9

4

15

35

80

80

Max.

±1

−

1.0

1.5

8

13

−

−

−

−

−

−

−

−

Unit

Conditions

µA VGS=±20V, VDS=0V

V ID=10µA, VGS=0V

µA VDS=30V, VGS=0V

V VDS=3V, ID=100µA

Ω ID=10mA, VGS=4V

Ω ID=1mA, VGS=2.5V

ms ID=10mA, VDS=3V

pF VDS=5V

pF VGS=0V

pF f=1MHz

ns ID=10mA, VDD 5V

ns VGS=5V

ns RL=500Ω

ns RGS=10Ω

!Packaging specifications

Type

Package

Code

Basic ordering unit

(pieces)

2SK3541

Taping

T2R

8000

2SK3541

!Electrical characteristic curves

0.15

4V

3V

Ta=25°C

3.5V

Pulsed

0.1

2.5V

0.05

2V

VGS=1.5V

0

0

1

2

3

4

5

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical output characteristics

200m

VDS=3V

100m Pulsed

50m

20m

10m

5m

2m

Ta=125°C

1m

75°C

25°C

0.5m

−25°C

0.2m

0.1m

0

1

2

3

4

GATE-SOURCE VOLTAGE : VGS (V)

Fig.2 Typical transfer characteristics

2

VDS=3V

ID=0.1mA

Pulsed

1.5

1

0.5

0

−50 −25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

channel temperature

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