2SK3541T2R データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
メーカー
2SK3541T2R Datasheet PDF : 5 Pages
| |||
Transistor
2SK3541
50
20
Ta=125°C
75°C
25°C
10
−25°C
5
VGS=4V
Pulsed
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
15
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
9
VGS=4V
8
Pulsed
7
ID=100mA
6
5
ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=−25°C
0.1
25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m
75°C
5m
25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
200m
Ta=25°C
100m
Pulsed
50m
20m
10m VGS=4V
0V
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
50
Ta=25°C
f=1MHZ
20
VGS=0V
Ciss
10
5
Coss
Crss
2
1
0.5
0.1 0.2 0.5 1 2
5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
1000
500
tf
td(off)
200
100
50
tr
20 td(on)
10
5
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
2
0.1 0.2 0.5 1 2
5 10 20 50 100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Share Link: 