2SK4151 データシートの表示（PDF） - Renesas Electronics
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2SK4151 Datasheet PDF : 9 Pages
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2SK4151
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
100
10
1
0.1
1
10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics (Typical)
160
ID = 1 A
Ta = 25°C
120
VDS
8
VGS
VDS = 100 V
50 V
6
25 V
80
4
40
2
VDS = 100 V
50 V
25 V
0
0
0
2
4
6
8
10
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
1.5
VDS = 10 V
ID = 10 mA
1.0
1 mA
0.5
0.1 mA
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Typical Capacitance vs.
Drain to Source Voltage
100
Ciss
Coss
10
VGS = 0
f = 1 MHz
Crss
Ta = 25°C
1
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
4
VGS = 0 V
Ta = 25°C
Pulse Test
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1901-0100 Rev.1.00 Mar 15, 2010
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