5STP24H2800 データシートの表示（PDF） - ABB
部品番号
コンポーネント説明
メーカー
5STP24H2800 Datasheet PDF : 5 Pages
| |||
On-state
ITAVM Max. average on-state current
ITRMS Max. RMS on-state current
ITSM Max. peak non-repetitive
surge current
I2t
Limiting load integral
VT On-state voltage
VT0 Threshold voltage
rT
Slope resistance
IH
Holding current
IL
Latching current
5STP 24H2800
2625 A
4120 A
Half sine wave, TC = 70°C
43000 A
46000 A
tp =
tp =
10 ms Tj = 125°C
8.3 ms After surge:
9245 kA2s tp =
8781 kA2s tp =
10 ms
8.3 ms
VD = VR = 0V
1.35 V IT =
3000 A
0.85 V IT = 1500 - 4500 A
0.160 mΩ
Tj = 125°C
25-75 mA
15-60 mA
150- mA
50-260000 mA
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Switching
di/dtcrit Critical rate of rise of on-state
current
td
Delay time
≤
tq
Turn-off time
≤
Qrr Recovery charge
min
max
150 A/µs
300 A/µs
Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
60 sec.
f = 50Hz
ITRM = 3000 A
IFG = 2 A, tr = 0.5 µs
3.0 µs
400 µs
VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs
4000 µAs
7000 µAs
Triggering
VGT
IGT
VGD
IGD
VFGM
IFGM
VRGM
PG
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
Tj = 25°
Tj = 25°
VD =0.4 x VDRM
VD = 0.4 x VDRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1047-02 Sep. 01
page 2 of 5
Share Link: 