5STP34H1601 データシートの表示（PDF） - ABB
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5STP34H1601 Datasheet PDF : 6 Pages
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5STP 34H1601
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
Half sine wave, Tc = 70°C
Peak non-repetitive surge ITSM
current
Limiting load integral
I2t
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
Peak non-repetitive surge ITSM
current
Limiting load integral
I2t
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
Characteristic values
Parameter
Symbol Conditions
min
On-state voltage
Threshold voltage
VT
V(T0)
IT = 4000 A, Tvj = 125 °C
IT = 4200 A - 12500 A, Tvj= 125 °C
Slope resistance
rT
Holding current
IH
Tvj = 25 °C
Tvj = 125 °C
Latching current
IL
Tvj = 25 °C
Tvj = 125 °C
typ
max
Unit
3370
A
5292
A
49×103 A
12.01×106 A2s
52.3×103 A
11.35×106 A2s
typ
max
Unit
1.2
V
0.94
V
0.066 mΩ
170
mA
90
mA
1500
mA
1000
mA
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
ITRM = A,
Cont.
f = 50 Hz
Critical rate of rise of on-
state current
di/dtcrit
VD ≤ 2950 V,
IFG = 2 A, tr = 0.3 µs
Cont.
f = 1 Hz
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 4000 A,
VR = 100 V, diT/dt = -12.5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs
Characteristic values
Parameter
Symbol Conditions
min
Recovery charge
Qrr
Tvj = 125°C, ITRM = 4000 A,
VR = 100 V,
diT/dt = -12.5 A/µs
Gate turn-on delay time
tgd
VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.3 µs, Tvj = 25 °C
typ
max
Unit
200 A/µs
1000 A/µs
200
µs
typ
max
Unit
2800
µAs
2
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1065-01 March 05
page 2 of 6
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