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MMOOSSFFIICCEETT
Product specification
75N08
■ Electrical Characteristics Ta = 25℃
P aram ete r
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S y mbo l
Te st co ndi tons
V(BR)DSS VGS = 0V, ID = 250µA
RDS(on) VGS = 10V, ID = 30A
VGS(th) VDS = VGS, ID = 250µA
gfs
VDS = 15V, ID = 30A
IDSS
IGSS
VDS = 60V, VGS = 0V
VDS =60V, VGS = 0V, TJ = 125℃
VGS = 20V
VGS = -20V
Qg
Qgs
VDS = 30 V, VGS = 10 V, ID = 75 A
Qg d
td(on)
tr
td(off)
VDD = 30V,RL=0.47Ω,
ID=75A,VGEN=10V RG=2.5 Ω
tf
Ciss
C oss
VGS= 0 V, VDS = 25 V, f = 1 MHz
Crss
Continuous Source Current(Body Diode)
IS
Pulsed Source Current (Body Diode) *1
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width ≤ 300μs; duty cycle ≤ 2%.
*2 Repetitive rating; pulse width limited bymax
I SM
VSD
trr
Qrr
TJ = 25℃, IF = 75A, VGS = 0V*1
TJ = 25℃, IF = 75A
di/dt = 100A/µs*1
Min Typ Max Unit
75
V
0.009 Ω
1
3
V
30
S
1
µA
50
1 00
nA
-10 0
121 150
20
nC
25
11
20
10
20
ns
107 200
22
40
560 0
82 0
pF
27 5
75
A
2 40
1.3
V
80 120 ns
0.32 0.54 uC
■ Marking
Marking
75N08
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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