7N80 データシートの表示（PDF） - Unisonic Technologies
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7N80 Datasheet PDF : 6 Pages
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7N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
800
V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ
ID=250μA,
Referenced
to
25°C
0.93
V/°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
10 µA
100 µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
100 nA
-100 nA
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
3.0
5.0 V
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.3A
1.4 1.9 Ω
Forward Transconductance
DYNAMIC PARAMETERS
gFS VDS=50V, ID=3.3A (Note 4)
5.5
S
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1.0MHz
1290 1680 pF
120 155 pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
10 13 pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=640V, VGS=10V, ID=6.6A
(Note 4,5)
QGD
27 35 nC
8.2
nC
11
nC
Turn-ON Delay Time
tD(ON)
35 80 ns
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=400V, ID=6.6A, RG=25Ω
(Note 4,5)
100 210 ns
50 110 ns
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
60 130 ns
Maximum Body-Diode Continuous Current
IS
6.6 A
Maximum Body-Diode Pulsed Current
ISM
26.4 A
Drain-Source Diode Forward Voltage
VSD IS =6.6A, VGS=0V
1.4 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
VGS=0V, IS=6.6A,
QRR dIF/dt=100A/μs (Note 4)
650
ns
7.0
μC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=25mH, IAS=6.6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-523.b
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