7N90 データシートの表示（PDF） - Unisonic Technologies
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7N90 Datasheet PDF : 6 Pages
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7N90
Preliminary
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Forward
Gate-Source Leakage Current
Reverse
IGSS
VDS=0V ,VGS=30V
IGSS
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.5A
Forward Transconductance
gFS VDS=50V, ID=3.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=720V, VGS=10V,
ID=7.0A (Note 4,5)
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=450V, ID=7.0A,
RG=25Ω (Note 4.,5)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7.0A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
VGS=0V, IS=7.0A,
QRR dIF/dt=100A/μs (Note 4)
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=30mH, IAS=7.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
900
V
0.96
V/°C
10 µA
100 µA
100 nA
-100 nA
3.0
5.0 V
1.5 1.8 Ω
5.7
S
1440 1880 pF
140 185 pF
17 23 pF
40 52 nC
8.5
nC
20
nC
35 80 ns
80 170 ns
95 200 ns
55 120 ns
6.4 A
25.6 A
1.4 V
400
ns
4.3
μC
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-475.a
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