81080V データシートの表示（PDF） - Lattice Semiconductor

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81080V

3.3V In-System Programmable SuperBIG™ High Density PLD

Lattice Semiconductor 

Specifications ispLSI 81080V

Switching Test Conditions

Input Pulse Levels

Input Rise and Fall Time

GND to VCCIOmin

≤ 1.5 ns 10% to 90%

Input Timing Reference Levels

1.5V

Ouput Timing Reference Levels

1.5V

Output Load

3-state levels are measured 0.5V from

steady-state active level.

See Figure 9

Table 2-0003/81080V

Output Load Conditions (See Figure 9)

Figure 9. Test Load

VCCIO

R1

Device

Output

R2

Test

Point

CL*

3.3V

2.5V

TEST CONDITION

R1 R2 R1 R2 CL

A

316Ω 348Ω 511Ω 475Ω 35pF

Active High

B

Active Low

∞ 348Ω ∞ 475Ω 35pF

316Ω ∞ 511Ω ∞ 35pF

C

Active High to Z

at VOH -0.5V

∞ 348Ω ∞ 475Ω 5pF

Active Low to Z

at VOL+0.5V

316Ω

∞

511Ω

∞

5pF

D Slow Slew

∞ ∞ ∞ ∞ 35pF

Table 2-0004A/81080V

*CL includes Test Fixture and Probe Capacitance.

0213A/81080V

DC Electrical Characteristics for 3.3V Range

Over Recommended Operating Conditions

SYMBOL

PARAMETER

VCCIO I/O Supply Voltage

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

CONDITION

TA = 0°C to + 70°C

IOL = 8 mA

IOH = -4 mA

MIN.

3.0

-0.3

2.0

–

2.4

MAX. UNITS

3.6

V

0.8

V

5.25 V

0.4

V

–

V

Table 2-0007/81080V

DC Electrical Characteristics for 2.5V Range

Over Recommended Operating Conditions

SYMBOL

PARAMETER

VCCIO I/O Supply Voltage

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

CONDITION

TA = 0°C to + 70°C

VCCIO=min, VIN=VIH or VIL, IOL= 100µA

VCCIO=min, VIN=VIH or VIL, IOL= 2mA

VCCIO=min, VIN=VIH or VIL, IOH= -100µA

VCCIO=min, VIN=VIH or VIL, IOH= -2mA

MIN.

2.3

-0.3

1.7

–

–

2.1

1.7

MAX. UNITS

2.7

V

0.7

V

5.25 V

0.2

V

0.7

V

–

V

–

V

Table 2-0007B/81080V

12

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