AP2301N データシートの表示（PDF） - Advanced Power Electronics Corp
部品番号
コンポーネント説明
メーカー
AP2301N Datasheet PDF : 6 Pages
| |||
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance VGS=-5V, ID=-2.8A
VGS=-2.8V, ID=-2.0A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS= ± 8V
ID=-2.8A
VDS=-6V
VGS=-5V
VDS=-15V
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-6V
f=1.0MHz
-20 -
-
V
- -0.1 - V/℃
-
- 130 mΩ
-
- 190 mΩ
-0.5 -
-
V
- 4.4 -
S
-
-
-1 uA
-
- -10 uA
-
- ±100 nA
- 5.2 10 nC
- 1.36 - nC
- 0.6 - nC
- 5.2 - ns
- 9.7 - ns
- 19 - ns
- 29 - ns
- 295 - pF
- 170 - pF
- 65 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25℃, IS=-1.6A, VGS=0V
Min. Typ. Max. Units
-
- -1 A
-
- -10 A
-
- -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Share Link: 