AP2301N
5
I D =-2.8A
V DS =-6V
4
3
2
1
0
0
2
4
6
8
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
3
5
7
9
11
13
-V DS (V)
Fig 10. Typical Capacitance Characteristics
10
1.5
T j =150 o C
T j =25 o C
1
1
0
0.5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage
Junction Temperature