Q62702-C2302 データシートの表示（PDF） - Siemens AG

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Q62702-C2302

PNP Silicon AF Transistors

Siemens AG 

BC 856W ... BC 860W

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V

IC = 10 mA

BC 856W

65

–

–

BC 857W, BC 860W

45

–

–

BC 858W, BC 859W

30

–

–

Collector-base breakdown voltage

V(BR)CB0

IC = 10 µA

BC 856W

80

–

–

BC 857W, BC 860W

50

–

–

BC 858W, BC 859W

30

–

–

Collector-emitter breakdown voltage

V(BR)CES

IC = 10 µA, VBE = 0

BC 856W

80

–

–

BC 857W, BC 860W

50

–

–

BC 858W, BC 859W

30

–

–

Emitter-base breakdown voltage

IE = 1 µA

V(BR)EB0 5

–

–

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

–

15 nA

–

–

5

µA

DC current gain

IC = 10 µA, VCE = 5 V

BC 856 AW … BC 859 AW

BC 856 BW … BC 860 BW

BC 857 CW … BC 860 CW

IC = 2 mA, VCE = 5 V

BC 856 AW … BC 859 AW

BC 856 BW … BC 860 BW

BC 857 CW … BC 860 CW

hFE

–

–

140 –

–

250 –

–

480 –

125 180 250

220 290 475

420 520 800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

–

mV

75 300

250 650

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

–

700 –

850 –

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(on)

600 650 750

–

–

820

1)Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

3

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