BTS7970B データシートの表示（PDF） - Infineon Technologies

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BTS7970B

High Current PN Half Bridge NovalithIC™

Infineon Technologies 

High Current PN Half Bridge

BTS 7970B

Block Description and Characteristics

4.2.1 Power Stages - Static Characteristics

– 40 °C < Tj < 150 °C, 8 V < VS < 18 V (unless otherwise specified)

Pos. Parameter

Symbol Limit Values

Unit Test Conditions

min. typ. max.

High Side Switch - Static Characteristics

4.2.1 On state high side

resistance

RON(HS)

–

–

4.2.2 Leakage current high IL(LKHS) –

side

–

4.2.3 Reverse diode

VDS(HS)

forward-voltage high

–

side 1)

–

–

Low Side Switch - Static Characteristics

mΩ IOUT = 20 A

VS= 13.5 V

79

Tj = 25 °C

10 12.5

Tj = 150 °C

–

1 µA VINH = 0 V

VOUT = 0 V

Tj < 85 °C

– 50 µA VINH = 0 V

VOUT = 0 V

Tj = 150 °C

V

0.9 1.5

0.8 1.1

0.6 0.8

IOUT = -9 A

Tj = -40 °C

Tj = 25 °C

Tj = 150 °C

4.2.4 On state low side

resistance

RON(LS)

mΩ IOUT = -20 A

VS= 13.5V

– 9 12

Tj = 25 °C

– 14 18

Tj = 150 °C

4.2.5 Leakage current low IL(LKLS) –

–

1 µA VINH = 0 V

side

VOUT = VS

Tj < 85 °C

–

– 15 µA VINH = 0 V

VOUT = VS

Tj = 150 °C

4.2.6 Reverse diode

forward-voltage low

side 1)

VSD(LS)

V

– 0.9 1.5

– 0.8 1.1

– 0.6 0.8

IOUT = 9 A

Tj = -40 °C

Tj = 25 °C

Tj = 150 °C

1) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR

Data Sheet

10

Rev. 2.0, 2006-05-09

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