BUZ90 データシートの表示（PDF） - Siemens AG

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BUZ90

SIPMOS® Power Transistor

Siemens AG 

BUZ 90

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

G

Pin 2

D

Pin 3

S

Type

BUZ 90

VDS

600 V

ID

4.5 A

RDS(on)

1.6 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 28 °C

Pulsed drain current

TC = 25 °C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

ID = 4.5 A, VDD = 50 V, RGS = 25 Ω

L = 29 mH, Tj = 25 °C

Gate source voltage

Power dissipation

TC = 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Package

TO-220 AB

Symbol

ID

IDpuls

IAR

EAR

EAS

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Ordering Code

C67078-S1321-A2

Values

Unit

A

4.5

18

4.5

8

mJ

320

± 20

V

W

75

-55 ... + 150 °C

-55 ... + 150

≤ 1.67

K/W

75

E

55 / 150 / 56

Semiconductor Group

1

07/96

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