BUZ90 データシートの表示（PDF） - Siemens AG

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BUZ90

SIPMOS® Power Transistor

Siemens AG 

BUZ 90

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TC = 25 °C

-

Inverse diode direct current,pulsed

ISM

TC = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 8 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

4.5

-

18

V

1.1

1.2

ns

350

-

µC

3

-

Semiconductor Group

4

07/96

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