CY7C1482V33-200BZXC(2004) データシートの表示（PDF） - Cypress Semiconductor
部品番号
コンポーネント説明
メーカー
CY7C1482V33-200BZXC
(Rev.:2004)
(Rev.:2004)
Cypress Semiconductor
CY7C1482V33-200BZXC Datasheet PDF : 30 Pages
| |||
PRELIMINARY
CY7C1480V33
CY7C1482V33
CY7C1486V33
Truth Table[ 2, 3, 4, 4, 5, 6]
Operation
Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ
Deselect Cycle, Power Down
None
H X XL X
L
X
X
X L-H Tri-State
Deselect Cycle, Power Down
None
L L XL L
X
X
X
X L-H Tri-State
Deselect Cycle, Power Down
None
L X HL L
X
X
X
X L-H Tri-State
Deselect Cycle, Power Down
None
L L XL H
L
X
X
X L-H Tri-State
Deselect Cycle, Power Down
None
L X HL H
L
X
X
X L-H Tri-State
Sleep Mode, Power Down
None
X X XH X
X
X
X
X X Tri-State
READ Cycle, Begin Burst
External L H L L L
X
X
X
L L-H Q
READ Cycle, Begin Burst
External L H L L L
X
X
X
H L-H Tri-State
WRITE Cycle, Begin Burst
External L H L L H
L
X
L
X L-H D
READ Cycle, Begin Burst
External L H L L H
L
X
H
L L-H Q
READ Cycle, Begin Burst
External L H L L H
L
X
H H L-H Tri-State
READ Cycle, Continue Burst
Next
X X XL H
H
L
H
L L-H Q
READ Cycle, Continue Burst
Next
X X XL H
H
L
H
H L-H Tri-State
READ Cycle, Continue Burst
Next
H X XL X
H
L
H
L L-H Q
READ Cycle, Continue Burst
Next
H X XL X
H
L
H
H L-H Tri-State
WRITE Cycle, Continue Burst
Next
X X XL H
H
L
L
X L-H D
WRITE Cycle, Continue Burst
Next
H X XL X
H
L
L
X L-H D
READ Cycle, Suspend Burst Current X X X L H
H
H
H
L L-H Q
READ Cycle, Suspend Burst Current X X X L H
H
H
H
H L-H Tri-State
READ Cycle, Suspend Burst Current H X X L X
H
H
H
L L-H Q
READ Cycle, Suspend Burst Current H X X L X
H
H
H
H L-H Tri-State
WRITE Cycle,Suspend Burst Current X X X L H
H
H
L
X L-H D
WRITE Cycle,Suspend Burst Current H X X L X
H
H
L
X L-H D
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
7. BWx represents any byte write signal.To enable any byte write BWx, a Logic LOW signal should be applied at clock rise. Any number of byte writes can be
enabled at the same time for any given write.
Document #: 38-05283 Rev. *C
Page 10 of 30
Share Link: