FOA11002A1 データシートの表示（PDF） - Infineon Technologies
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FOA11002A1
Infineon Technologies
FOA11002A1 Datasheet PDF : 2 Pages
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PRODUCT BRIEF
Semiconductor Solutions for
High Speed Communication
and Fiber Optic Applications
The FOA11002A1 is the industry's lowest power
consuming STM64/OC-192 Transimpedance Amplifier
for SDH/SONET systems in Silicon Germanium technol-
ogy. This new device is a key component for future high
speed optical communication systems for regional, met-
ropolitan and backbone transport data networks at the
highest speeds up to 10.7 Gbit/s over one single fiber.
It is a member of the complete 10 Gbit/s chipset in the
Silicon Germanium technology.
Features
s Input sensitivity: -18.0 dBm
electrical at BER = 10-12
s Transimpedance: 6 kΩ
s Overload: 0 dBm electrical
s Single power supply: +5 V
s Low power consumption:
170 mW
s Internal DC compensation
loop increases dynamic
range
s Internal bias generation for
PIN photo diode including
low-pass filter
s Operates with PIN photo
diode or APD
s Monitor output for mirrored
photodiode current
Packing
F OA 1 1 0 02 A 1 Typical Applications
s Internal bias generation for
s Fiber optics telecom and
datacom applications
PIN photo diode including
low-pass filter
s SONET/SDH OC-192/STM-64
with and without FEC
s Operates with PIN photo
diode or APD
s Preamplifier modules
s Monitor output for mirrored
photodiode current
s Optical receiver modules
s Few external components
necessary
Main Advantages
s Data rate from 9.95 Gbit to
10.7 Gbit/s up to 10.7 Gbit/s
Input sensitivity:
- 18.0 dBm at BER = 10-12
s Small chip size of
0.97 x 0.97 mm
(available as bare die)
s Transimpedance: 6 kΩ
s High overload: 1.5 mA pp
maximum input current
s Single power supply: +5 V
s Low power consumption:
170 mW
s Internal DC compensation
loop increases dynamic
range
Type
Sales Code
Package
TIA
FOA11002A
Bare die
FOA11002A1
Transimpedance Amplifier
TIA 9.95 - 10.7 Gbit/s, 5.0 V
Never stop thinking.
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