IRF3707SPBF データシートの表示（PDF） - International Rectifier

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IRF3707SPBF

HEXFET Power MOSFET

International Rectifier 

IRF3707S/LPbF

3000

2500

2000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1500

1000

Coss

500

Crss

0

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10 ID = 24.8A

8

VDS = 15V

6

4

2

0

0

10

20

30

40

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 175° C

10

TJ = 25° C

1

0.1

0.2

VGS = 0 V

0.6

1.0

1.4

1.8

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

100us

10

1ms

10ms

TC = 25° C

TJ = 175° C

Single Pulse

1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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