IXGX60N60B2D1 データシートの表示（PDF） - IXYS CORPORATION
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IXGX60N60B2D1 Datasheet PDF : 6 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 50 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 58
S
3900
pF
340
pF
100
pF
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
170
nC
25
nC
57
nC
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3.3 Ω
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
28
ns
30
ns
160 270 ns
100 170 ns
1.0 2.5 mJ
28
ns
36
ns
1.5
mJ
310
ns
240
ns
2.8
mJ
0.25 K/W
0.15
K/W
IXGK 60N60B2D1
IXGX 60N60B2D1
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
PLUS247 Outline
Inches
Min. Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020 1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
2.1 V
1.4 V
IRM
trr
RthJC
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
8.3 A
35
ns
0.85 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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