IXGX60N60B2D1 データシートの表示（PDF） - IXYS CORPORATION

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IXGX60N60B2D1

HiPerFAST™ IGBT with Diode

IXYS CORPORATION 

Fig. 13. Dependence of Turn-Off

Sw itching Tim e on Tem perature

350

td(off)

300

tfi - - - - - -

IC = 25A

RG = 3.3Ω

50A

250

VGE = 15V

VCE = 400V

100A

200

150

IC = 100A

50A

100

25A

50

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

10000

1000

Fig. 15. Capacitance

f = 1 MHz

Cies

Coes

100

Cres

IXGK 60N60B2D1

IXGX 60N60B2D1

Fig. 14. Gate Charge

15

VCE = 300V

IC = 50A

12

IG = 10mA

9

6

3

0

0 20 40 60 80 100 120 140 160 180

Q G - nanoCoulombs

10

0

5 10 15 20 25 30 35 40

VC E - Volts

0.275

0.25

0.225

0.2

0.175

0.15

0.125

0.1

0.075

0.05

1

© 2003 IXYS All rights reserved

Fig. 16. Maxim um Transient Therm al Resistance

10

100

Pulse Width - milliseconds

1000

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