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M28W320ECT70N1F データシートの表示(PDF) - STMicroelectronics

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M28W320ECT70N1F
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M28W320ECT70N1F Datasheet PDF : 53 Pages
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M28W320ECT, M28W320ECB
Figure 18. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
Write Address 1
& Data 1 (3)
Write Address 2
& Data 2 (3)
Read Status
Register
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
NO
b3 = 0
YES
NO
b4 = 0
YES
NO
b1 = 0
YES
End
} while (status_register.b7== 0) ;
VPP Invalid
Error (1, 2)
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
}
AI03539b
Note: 1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
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