MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
1.5 M63828WP
M63828DP
1.0
0.5
0.764
0.520
00
25
50
75 85 100
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
(M63828WP)
500
q
400
300
200
•The collector current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
00
20 40 60 80
w
e
r
t
y
u
100
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63828DP)
500
400
q
300
w
200
•The collector current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
00
•Ta
=
25°C
20
40
60
80
e
r
t uy
100
Duty cycle (%)
Clamping Diode Characteristics
500
400
300
Ta = 85°C
200
Ta = 25°C
100
Ta = –40°C
00
0.4
0.8
1.2
1.6
Forward bias voltage VF (V)
Duty-Cycle-Collector Characteristics
(M63828WP)
500
400
q
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
00
•Ta
=
85°C
20
40
60
80
w
e
r
t uy
100
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63828DP)
500
400
300
q
200
•The collector current values
100 represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
00
20 40 60
w
e
r
t uy
•Ta = 85°C
80 100
Duty cycle (%)
Feb. 2003