M69KB096AA データシートの表示（PDF） - STMicroelectronics

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M69KB096AA

64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

STMicroelectronics 

M69KB096AA

64 Mbit (4M x16)

1.8V Supply, 80MHz Clock Rate, Burst PSRAM

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 1.7 to 1.95V core supply voltage

– VCCQ = 1.7 to 3.3V for I/O buffers

■ ASYNCHRONOUS MODES

– Asynchronous Random Read: 70ns and

85ns access time

– Asynchronous Write

– Asynchronous Page Read

Page Size: 16 words

Subsequent read within page: 20ns

■ SYNCHRONOUS BURST READ AND

WRITE MODES

– Burst Write in Continuous Mode

– Burst Read:

Fixed Length (4, 8, or 16 Words) or

Continuous mde

Maximum Clock Frequency: 66MHz,

80MHz

Burst initial latency: 50ns (4 clock cycles)

at 80MHz

Output delay: 9ns at 80MHz

■ BYTE CONTROL BY LB/UB

■ LOW POWER CONSUMPTION

– Asynchronous Random Read Mode:

< 25mA

– Asynchronus Page Read Mode

(subsequent read operations): < 15mA

– Synchronous Burst Read

Initial access: < 35mA

Continuous Burst Read: < 15mA

– Standby Current: 120µA

– Deep Power-Down Current: 10µA (typ)

Figure 1. Package

Wafer

■ LOW POWER FEATURES

– Temperature Compensated Refresh

(TCR)

– Partial Array Refresh (PAR)

– Deep Power-Down (DPD) Mode

■ OPERATING TEMPERATURE

– –30°C to +85°C

THE M69KB096AA IS ONLY AVAILABLE AS PART OF A MULTI-CHIP PACKAGE PRODUCT

January 2006

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