MBR1060 データシートの表示（PDF） - ON Semiconductor

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MBR1060

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS

ON Semiconductor 

MBR1060, MBR1080, MBR1090, MBR10100

MAXIMUM RATINGS

Rating

MBR

Symbol

Unit

1060 1080 1090 10100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

60

80

90

100

V

VRWM

VR

Average Rectified Forward Current (Rated VR) TC = 133°C

IF(AV)

10

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 133°C

IFRM

20

A

Nonrepetitive Peak Surge Current

IFSM

150

A

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

IRRM

0.5

A

Operating Junction Temperature (Note 1)

TJ

*65 to +175

°C

Storage Temperature

Tstg

*65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Maximum Thermal Resistance, Junction−to−Case

Maximum Thermal Resistance, Junction−to−Ambient

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 10 Amps, TC = 125°C)

(iF = 10 Amps, TC = 25°C)

(iF = 20 Amps, TC = 125°C)

(iF = 20 Amps, TC = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TC = 125°C)

(Rated dc Voltage, TC = 25°C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

RqJC

RqJA

vF

iR

2.0

°C/W

60

°C/W

V

0.7

0.8

0.85

0.95

mA

6.0

0.10

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