MC33797 データシートの表示（PDF） - Freescale Semiconductor
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MC33797 Datasheet PDF : 32 Pages
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STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2
= VDD; RR_LIMIT_X = 10 kΩ ±1%, RR_DIAG = 10 kΩ ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXA terminal, with High Side Safing Sensor Diagnostic active
IRRE
µA
260
350
400
VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXB terminal, with High Side Safing Sensor Diagnostic active
IRRE
µA
22
32
55
VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5)
Either VFIRE!B or VFIRE2B Diagnostic active
IRRE
mA
0.3
2.0
3.8
VFIRE Quiescent Current - Total
All VFIRE terminals measured together, with Diagnostics Off
IQVFIRETOTAL
90
µA
135
180
Maximum Allowable External Capacitance to Ground (10)
Per Squib terminal SQB_LO and SQB_HI
CSMAX
–
µF
–
0.12
Maximum Allowable External Resistance to Ground During Firing (10)
VFIRE_RTN terminal to Ground
RSMAX
–
Ω
–
0.15
Individual FET Driver Thermal Shutdown (10), (11)
TSD
160
–
190
C
FET Driver Thermal Shutdown Re-Enable Threshold After Drive Cool-down
TREN
C
(10), (11)
90
–
110
FET DRIVERS HIGH- AND LOW-SIDE DRIVER TRANSISTOR STATUS/DIAGNOSTICS ($82, $83 COMMANDS)
Voltage Transistor Test Threshold for High-Side Driver Transistor
High-Side Driver Current Limit During High-Side Driver Transistor
Diagnostics
15 V ≤ VVFIRE_XX ≤ 35 V
Voltage Transistor Test Threshold for Low-Side Driver Transistor
Low-Side Driver Current Limit During Low-Side Driver Transistor
Diagnostics
15 V ≤ VVFIRE_XX ≤ 35 V
VTRANTST1
5.5
6.0
6.5
V
ITRANTST1
mA
2.0
10
50
VTRANTST2
1.0
1.4
2.0
V
ITRANTST2
mA
2.0
10
50
FEN INPUT TERMINAL (FEN_1 AND FEN_2)
Internal Current Pull-Down
Logic Low Level
Fire Enable Terminal Logic High Level
IFEN
-25
-40
-50
µA
VFEN(LO)
0.0
2.5
0.35 x VDD V
VFEN(HI)
0.65 x VDD
2.5
1.0 x VDD
V
Notes
10. Guaranteed by design.
11. With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms.
The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib
driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is
exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the
arm/fire command when the TEMPRENABLE (MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15 Ω ±0.15 Ω.
Shorted squib load: 0.1 Ω.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33797
7
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