MJD44H11 データシートの表示（PDF） - ON Semiconductor

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MJD44H11

Complementary Power Transistors DPAK For Surface Mount Applications

ON Semiconductor 

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel for Surface Mount

(“T4” Suffix)

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage −

VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current − Continuous

Peak

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation* @ TA = 25°C

Derate above 25°C

Operating and Storage Junction Temperature

Range

Symbol

VCEO

VEB

IC

PD

PD

TJ, Tstg

Max

80

5

8

16

20

0.16

1.75

0.014

−55 to

+ 150

Unit

Vdc

Vdc

Adc

W

W/°C

W

W/°C

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol Max Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25 °C/W

Thermal Resistance, Junction−to−Ambient*

RqJA

71.4 °C/W

Lead Temperature for Soldering

TL

260

°C

*These ratings are applicable when surface mounted on the minimum pad sizes

recommended.

http://onsemi.com

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS

20 WATTS

MARKING

DIAGRAMS

12

3

4

DPAK

CASE 369C

STYLE 1

YWW

J4

xH11

1

2

3

4

DPAK−3

CASE 369D

STYLE 1

Y

= Year

WW

= Work Week

x

= 4 or 5

YWW

J4

xH11

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2004

1

August, 2004 − Rev. 6

Publication Order Number:

MJD44H11/D

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