MPS5179 データシートの表示（PDF） - ON Semiconductor
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MPS5179 Datasheet PDF : 4 Pages
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ON Semiconductort
High Frequency Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
Tstg
Value
12
20
2.5
50
200
1.14
300
1.71
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
mW/°C
°C
MPS5179
ON Semiconductor Preferred Device
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Symbol
Min
VCEO(sus)
12
V(BR)CBO
20
V(BR)EBO
2.5
ICBO
—
—
hFE
25
VCE(sat)
—
VBE(sat)
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
µAdc
0.02
1.0
250
—
0.4
Vdc
1.0
Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 – Rev. 2
Publication Order Number:
MPS5179/D
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