MPS5179 データシートの表示（PDF） - ON Semiconductor

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MPS5179

High Frequency Transistor

ON Semiconductor 

MPS5179

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(1)

(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)

fT

900

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)

Ccb

—

Small Signal Current Gain

(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)

hfe

25

1. fT is defined as the frequency at which |hfe| extrapolates to unity.

Max

2000

1.0

300

Unit

MHz

pF

—

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