MRF1550FNT1(2006) データシートの表示（PDF） - Freescale Semiconductor

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MRF1550FNT1
(Rev.:2006)

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies to 175 MHz. The high gain and broadband performance of these devices

make them ideal for large - signal, common source amplifier applications in

12.5 volt mobile FM equipment.

• Specified Performance @ 175 MHz, 12.5 Volts

Output Power — 50 Watts

Power Gain — 12 dB

Efficiency — 50%

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Broadband - Full Power Across the Band: 135 - 175 MHz

• Broadband Demonstration Amplifier Information Available

Upon Request

• 200_C Capable Plastic Package

• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Document Number: MRF1550N

Rev. 11, 9/2006

MRF1550NT1

MRF1550FNT1

175 MHz, 50 W, 12.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 1264 - 09, STYLE 1

TO - 272 - 6 WRAP

PLASTIC

MRF1550NT1

Table 1. Maximum Ratings

CASE 1264A - 02, STYLE 1

TO - 272 - 6

PLASTIC

MRF1550FNT1

Rating

Symbol

Value

Drain - Source Voltage

Gate - Source Voltage

Drain Current — Continuous

Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C

VDSS

VGS

ID

PD

- 0.5, +40

± 20

12

165

0.50

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Tstg

TJ

Symbol

- 65 to +150

200

Value(2)

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

RθJC

0.75

Test Methodology

Rating

Package Peak Temperature

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

1

260

1.

Calculated based on the formula PD =

TJ – TC

RθJC

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

Unit

Vdc

Vdc

Adc

W

W/°C

°C

°C

Unit

°C/W

Unit

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

© Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data

Freescale Semiconductor

MRF1550NT1 MRF1550FNT1

1

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