MRF1550FNT1 データシートの表示（PDF） - Freescale Semiconductor

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MRF1550FNT1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 800 μA)

Drain - Source On - Voltage

(VGS = 5 Vdc, ID = 1.2 A)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 4.0 Adc)

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

RF Characteristics (In Freescale Test Fixture)

Common - Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

Symbol

Min Typ Max

IDSS

IGSS

—

—

1

—

—

0.5

VGS(th)

RDS(on)

VDS(on)

1

—

3

—

—

0.5

—

—

1

Ciss

Coss

Crss

—

—

500

—

—

250

—

—

35

Gps

—

14.5

—

η

—

55

—

Unit

μAdc

μAdc

Vdc

Ω

Vdc

pF

pF

pF

dB

%

MRF1550NT1 MRF1550FNT1

2

RF Device Data

Freescale Semiconductor

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