NJL4281D データシートの表示（PDF） - ON Semiconductor
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NJL4281D Datasheet PDF : 7 Pages
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NJL4281D (NPN) NJL4302D (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cut−off Current
(VCE = 200 V, IB = 0)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (non−repetitive)
(VCE = 100 Vdc, t = 1.0 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
Emitter−Base Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
Base−Emitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol
VCE(sus)
ICEO
ICBO
IEBO
IS/b
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
vF
iR
trr
Min
Max
Unit
350
−
Vdc
−
100
mAdc
mAdc
−
50
mAdc
−
5.0
Adc
4.5
−
1.0
−
−
80
250
80
250
80
250
80
250
40
−
10
−
Vdc
−
1.0
Vdc
−
1.4
Vdc
−
1.5
35
−
−
600
1.1
0.93
10
100
100
MHz
pF
V
mA
ns
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