NTR4101P データシートの表示（PDF） - ON Semiconductor
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NTR4101P Datasheet PDF : 5 Pages
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NTR4101P, NTRV4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1000
800
600
VGS = 0 V
Ciss
TJ = 25°C
400
200
Coss
0
Crss
0 2 4 6 8 10 12 14 16 18 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4.0
QT
3.5
3.0
2.5
VDS
2.0 Qgs
Qgd
VGS
1.5
1.0
0.5
0
0
ID = −1.6 A
TJ = 25°C
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
1000
VDD = −10 V
ID = −1.6 A
VGS = −4.5 V
100
td(off)
10
tf
tr
td(on)
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
5
4.5
VGS = 0 V
TJ = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
100
VGS ≤ 10 V
Single Pulse
10 TC = 25°C
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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