F64P30B8E2T085 データシートの表示（PDF） - Intel

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F64P30B8E2T085

Intel StrataFlash® Embedded Memory (P30)

Intel 

Intel StrataFlash® Embedded Memory

(P30)

1-Gbit P30 Family

Datasheet

Product Features

■ High performance

■ Security

— 85/88 ns initial access

— One-Time Programmable Registers:

— 40 MHz with zero wait states, 20 ns clock-to-

data output synchronous-burst read mode

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

— 25 ns asynchronous-page read mode

• Additional 2048 user-programmable OTP bits

— 4-, 8-, 16-, and continuous-word burst mode

— Selectable OTP Space in Main Array:

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

• 4x32KB parameter blocks + 3x128KB main

blocks (top or bottom configuration)

— 1.8 V buffered programming at 7 µs/byte (Typ)

— Absolute write protection: VPP = VSS

■ Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— Asymmetrically-blocked architecture

■ Software

— Four 32-KByte parameter blocks: top or

— 20 µs (Typ) program suspend

bottom configuration

— 20 µs (Typ) erase suspend

— 128-KByte main blocks

— Intel® Flash Data Integrator optimized

■ Voltage and Power

— VCC (core) voltage: 1.7 V – 2.0 V

— VCCQ (I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— Basic Command Set and Extended Command

Set compatible

— Common Flash Interface capable

■ Density and Packaging

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— 64/128/256-Mbit densities in 56-Lead TSOP

package

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— 64/128/256/512-Mbit densities in 64-Ball

Intel® Easy BGA package

• 1-Gbit in SCSP is –30 °C to +85 °C

— 64/128/256/512-Mbit and 1-Gbit densities in

— Minimum 100,000 erase cycles per block

Intel® QUAD+ SCSP

— ETOX™ VIII process technology (130 nm)

— 16-bit wide data bus

The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel

StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device

brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.

Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options, and three

industry standard package choices.

The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.

Order Number: 306666, Revision: 001

April 2005

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