PMXB56EN データシートの表示（PDF） - NXP Semiconductors.
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PMXB56EN Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
102
lD
(A)
10
aaa-009040
tp = 10 µs
1
DC; Tamb = 25 °C; 6 cm2
10-1
DC; Tsp = 25 °C
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1]
-
271 312 K/W
[2]
-
102 117 K/W
-
10
15
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
10
0
0.01
aaa-008918
Fig. 5.
1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
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