PMXB65ENE データシートの表示（PDF） - NXP Semiconductors.

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PMXB65ENE

30 V, N-channel Trench MOSFET

NXP Semiconductors. 

PMXB65ENE

30 V, N-channel Trench MOSFET

20 May 2015

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection 1 kV

• Very low Drain-Source on-state resistance RDSon = 44 mΩ

3. Applications

• Low-side load switch and charging switch for portable devices

• Power management in battery-driven portables

• LED driver

• DC-to-DC converters

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 10 V; Tamb = 25 °C

VGS = 10 V; ID = 3.2 A; Tj = 25 °C

Min Typ Max Unit

-

-

30

V

-20 -

20

V

[1]

-

-

3.2 A

-

44

67

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

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