PMXB65ENE データシートの表示（PDF） - NXP Semiconductors.

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PMXB65ENE

30 V, N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMXB65ENE

30 V, N-channel Trench MOSFET

102

lD

(A)

10

aaa-008875

tp = 10 µs

tp = 100 µs

1

tp = 1 ms

DC; Tsp = 25 °C

10-1

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 10 ms

tp = 100 ms

10-2

10-1

1

IDM = single pulse

10

102

VDS (V)

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Rth(j-sp)

Thermal characteristics

Parameter

Conditions

thermal resistance

from junction to

ambient

in free air

thermal resistance

from junction to solder

point

Min Typ Max Unit

[1]

-

271 312 K/W

[2]

-

102 117 K/W

-

10

15

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMXB65ENE

Product data sheet

All information provided in this document is subject to legal disclaimers.

20 May 2015

© NXP Semiconductors N.V. 2015. All rights reserved

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