RJP30E3DPP-M0 データシートの表示（PDF） - Renesas Electronics

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RJP30E3DPP-M0

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP30E3DPP-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation voltage VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test.

Preliminary

Typ

—

—

—

1.6

1700

85

40

52

9

15

0.04

0.12

0.09

0.15

Max

1

±100

5

2.1

—

—

—

—

—

—

—

—

—

—

Unit

μA

nA

V

V

pF

pF

pF

nC

nC

nC

μs

μs

μs

μs

(Ta = 25°C)

Test Conditions

VCE = 360 V, VGE = 0

VGE = ± 30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 40 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 150 V

IC = 40 A

IC = 40 A

RL = 4 Ω

VGE = 15 V

RG = 5 Ω

www.DataSheet.co.kr

R07DS0353EJ0200 Rev.2.00

Apr 15, 2011

Page 2 of 6

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