RJP30E3DPP-M0 データシートの表示（PDF） - Renesas Electronics
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RJP30E3DPP-M0 Datasheet PDF : 7 Pages
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RJP30E3DPP-M0
Typical Capacitance vs.
Collector To Emitter Voltage
10000
VGE = 0 V
f = 1 MHz
Ta = 25°C
Cies
1000
100
Coes
Cres
10
0
20 40 60 80 100
Collector To Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 150 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
100
10
1
tf
td(off)
tr
td(on)
10
100
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 40 A, RL = 4 Ω
VGE = 15 V, Rg = 5 Ω
td(off)
tf
100
tr
td(on)
10
0 25 50 75 100 125 150
Case Temparature Tc (°C)
Preliminary
Dynamic Input Characteiristics (Typical)
400
16
IC = 40 A
VGE
300
VCE
200
VCE = 250 V
12
150 V
8
100
0
0
VCE = 250 V
150 V
20 40 60
4
0
80 100
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
1000
IC = 40 A, RL = 4 Ω
VGE = 15 V, Ta = 25°C
tf
100
tr
td(off)
td(on)
www.DataSheet.co.kr
10
1
10
100
Gate Resistance Rg (Ω)
R07DS0353EJ0200 Rev.2.00
Apr 15, 2011
Page 4 of 6
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