RJP30H1DPP-M0 データシートの表示（PDF） - Renesas Electronics

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RJP30H1DPP-M0

Silicon N Channel IGBT High speed power switching

Renesas Electronics 

RJP30H1DPP-M0

Silicon N Channel IGBT

High speed power switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 High speed switching: tr =80 ns typ., tf = 150 ns typ.

 Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

 Low leak current: ICES = 1 A max.

 Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

Preliminary Datasheet

R07DS0466EJ0200

Rev.2.00

Jun 15, 2011

C

1

23

1. Gate

2. Collector

G

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Tc = 25C

www.DataSheet.co.kr

Symbol

VCES

VGES

IC

ic(peak) Note1

PC Note2

j-c

Tj

Tstg

Ratings

360

±30

30

200

20

6.25

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/W

°C

°C

R07DS0466EJ0200 Rev.2.00

Jun 15, 2011

Page 1 of 6

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