RJP30H1DPP-M0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
2.5
Collector to emitter saturation
voltage
VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Notes: 3. Pulse test
Preliminary
Typ
—
—
—
1.5
740
40
17
23
4
8
0.02
0.08
0.04
0.15
Max
1
±100
5
2
—
—
—
—
—
—
—
—
—
—
Unit
A
nA
V
V
(Ta = 25°C)
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 30A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 150 V
nC IC = 30 A
s IC = 30 A
s RL = 5
s VGE = 15 V
s RG = 5
www.DataSheet.co.kr
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6