RJP60F4DPM データシートの表示（PDF） - Renesas Electronics
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RJP60F4DPM Datasheet PDF : 7 Pages
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RJP60F4DPM
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
10
1
10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
VCC = 400 V, VGE = 15 V
200
IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
160 tr
120
td(off)
80 tf
40 td(on)
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
VGE
VCE
600
VCE = 600 V
12
300 V
400
8
200
0
0
4
VCE = 600 V
300 V
IC = 30 A 0
20 40 60 80 100
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
100000
10000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
1000
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100
10
1
Eoff
Eon
10
100 200
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
1200
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
Eoff
800
Eon
400
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 4 of 6
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