RJP63F3DPP-M0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
2.5
Collector to emitter saturation voltage VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Notes: 3. Pulse test.
Preliminary
Typ
—
—
—
1.7
1250
48
22
36
7
10
0.02
0.07
0.05
0.1
Max
1
±100
5
2.2
—
—
—
—
—
—
—
—
—
—
Unit
μA
nA
V
V
pF
pF
pF
nC
nC
nC
μs
μs
μs
μs
(Ta = 25°C)
Test Conditions
VCE = 630 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 40 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 40 A
IC = 40 A
RL = 7.5 Ω
VGE = 15 V
Rg = 5 Ω
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 2 of 6