RJP63F3DPP-M0-T2 データシートの表示（PDF） - Renesas Electronics
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RJP63F3DPP-M0-T2 Datasheet PDF : 7 Pages
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RJP63F3DPP-M0
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
1000
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0
20 40 60 80 100
Collector to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
100
10
1
tf
td(off)
tr
td(on)
10
100
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
IC = 40 A, RL = 7.5 Ω
VGE = 15 V, Rg = 5 Ω
tf
100
tr
td(on)
td(off)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
VGE
600
VCE = 500 V
12
VCE
300 V
400
8
200
0
0
VCE = 500 V
4
300 V
IC = 40 A 0
8
16
24
32
40
Gate Charge Qg (nc)
Switching Characteristics (Typical) (2)
1000
IC = 40 A, RL = 7.5 Ω
VGE = 15 V, Ta = 25°C
td(off)
tf
100
tr
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 4 of 6
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