RJP63K2 データシートの表示（PDF） - Renesas Electronics
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RJP63K2 Datasheet PDF : 7 Pages
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RJP63K2DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
10 μs
10
= 100 μs
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
1
10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
50
VCE = 10 V
Pulse Test
40
30
20
10
Tc = 75°C
0
0
2
4
25°C
−25°C
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = 75°C
1
25°C
−25°C
0.1
1
10
100
Collector Current IC (A)
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
10 V
15 V
60
9V
8.5 V
8V
7.5 V
7V
40
6.5 V
6V
20
VGE = 5.5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
10
Ta = 25°C
Pulse Test
8
6
IC = 35 A
80 A
120 A
4
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
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