SQ9945BEY データシートの表示（PDF） - Vishay Semiconductors
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SQ9945BEY Datasheet PDF : 9 Pages
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SQ9945BEY
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 10 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 3.4 A
ID = 3.4 A, TJ = 125 °C
ID = 3.4 A, TJ = 175 °C
Forward Transconductancef
Dynamicb
VGS = 4.5 V
ID = 3.7 A
gfs
VDS = 15 V, ID = 3.7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Crss
Qg
Qgs
VGS = 10 V
VDS = 30 V, ID = 4.3 A
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
f = 1 MHz
VDD = 30 V, RL = 8.8
ID 3.4 A, VGEN = 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 2 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
60
1.5
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
2.22
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
2
2.5
-
± 100 nA
-
1
-
50
μA
-
150
-
-
A
0.045 0.064
-
0.110
-
0.137
0.060 0.082
12
-
S
375 470
70
88
pF
30
36
8
12
1.2
1.5
nC
1.7
2.6
-
6.66
6
9
2.8
4.2
ns
17
26
1.7
3
-
21.5
A
0.75 1.1
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1522-Rev. C, 25-Jun-12
2
Document Number: 71504
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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