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STD60N55 データシートの表示(PDF) - STMicroelectronics
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STD60N55
N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET
STMicroelectronics
STD60N55 Datasheet PDF : 12 Pages
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STD60N55 - STD60N55-1
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t
d(on)
t
r
Turn-on delay time
Rise time
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 27V, I
D
= 32A,
R
G
= 4.7
Ω,
V
GS
= 10V
(see Figure 3)
V
DD
= 27V, I
D
= 32A,
R
G
= 4.7
Ω,
V
GS
= 10V
(see Figure 3)
Min. Typ. Max. Unit
20
ns
50
ns
35
ns
11.5
ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
I
SDM
(1)
Source-drain current (pulsed)
V
SD
Forward on voltage
I
SD
= 65A, V
GS
= 0
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 65A, V
DD
= 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 5)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
65 A
260 A
1.5 V
47
ns
87
nC
3.7
A
5/12
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