TPD1011 データシートの表示（PDF） - Toshiba
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TPD1011 Datasheet PDF : 11 Pages
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Maximum Ratings (Ta = 25°C)
TPD1011S
Characteristics
Symbol
Rating
Unit
Drain-source Voltage
VDS
60
V
Supply Voltage
DC
Pulse
VDD (1)
25
V
VDD (2)
60 (Rs = 1Ω, τ = 250ms)
V
Input Voltage
DC
Pulse
VIN (1)
−0.5~12
V
VIN (2)
VDD (1) + 1.5 (t = 100ms)
V
Diagnosis Output Voltage
VDIAG
−0.5~25
V
Output Current
IO
Internally Limited
A
Input Current
IIN
±10
mA
Diagnosis Output Current
IDIAG
5
mA
Power Dissipation
Tc = 25°C
PD (1)
30
W
Ta = 25°C
PD (2)
2
W
Operating Temperature
Topr
−40~85
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55~150
°C
Lead Temperature/time
TSOL
275 (5s), 260 (10s)
°C
Electrical Characteristics (Tj = −40~85°C, VDD = 8~18V)
Characteristics
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
Operating Supply Voltage
Supply Current
Input Voltage
VDD (opr)
IDD
VIH
VIL
―
―
― VDD = 12V, VIN = 0V
― VDD = 12V, IO = 8A
― VDD = 12V, IO = 1.2mA
5
12
18
V
―
1
5
mA
3.5
―
―
V
―
―
1.5
V
Input Current
On Voltage
On Resistance
IIN (1)
IIN (2)
VDS (ON)
RDS (ON)
― VDD = 12V, IIN = 5V
VDD = 12V, IIN = 0V
―
50
200
µA
−0.2 ―
0.2
µA
― VDD = 12V, IO = 8A, Tj = 25°C ―
― 0.48
V
― VDD = 12V, IO = 8A, Tj = 25°C ―
―
0.06
Ω
Output Leakage Current
Diagnosis Output
Voltage
“L” Level
IOL
― VDD = 18V, VIN = 0V
VDL
― VDD = 12V, IDL = 1mA
―
―
1.2 mA
―
―
0.4
V
Diagnosis Output
Current
“H” Level
IDH
― VDD = 18V, VDH = 18V
―
―
10
µA
Overcurrent Protection
IS (1) (Note 1)
1
VDD = 12V, Tj = 25°C
IS (2) (Note 2) 2
15
40
―
A
30
50
―
A
Thermal Shutdown
Temperature
Hysteresis
Open Detection Resistance
TS
∆TS
Rops
―
―
―
―
― VDD = 8V
150 160 200
°C
―
10
―
°C
1
50
100
kΩ
Switching Time
tON
tOFF
3 VDD = 12V, RL = 5Ω
3 Tj = 25°C
10
200
―
µs
10
30
―
µs
Note 1: IS (1) Overcurrent detection value when load is short circuited and VIN = “L” → “H”
Note 2: IS (2) Overcurrent detection value when load current is increased while VIN = “H”
4
2002-10-24
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