BDY185 データシートの表示（PDF） - Comset Semiconductors

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BDY185

NPN SILICON TRANSISTORS, DIFFUSED MESA

Comset Semiconductors 

BDY26 – 183T2

BDY27 – 184T2

BDY28 – 185T2

NPN SILICON TRANSISTORS, DIFFUSED MESA.

They are NPN transistors mounted in Jedec TO-3.

LF Large Signal Power Amplification.

High Current Fast Switching.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCEO

Collector-Emitter Voltage

VCBO

VEBO

IC

IB

PTOT

TJ

TS

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Junction Temperature

Storage Temperature

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

@ TC = 25°

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

Value

180

200

250

300

400

500

10

6

3

87.5

200

-65 to +200

Unit

V

V

V

A

A

W

°C

Value

2

Unit

°C/W

1|3

24/09/2012

COMSET SEMICONDUCTORS

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