WFSA6503 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFSA6503 Datasheet PDF : 9 Pages
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WFSA6503
P-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-250uA, VGS=0V
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
VDS= VGS, ID=250uA
ID=-6A, VGS=-10V
ID=-5A, VGS=-4.5V
VDS=-15V,
VGS=0V,
f=1MHz
VGS=-10V,
VDS=-15V,
RL=2.7Ω,
RGEN=3Ω
VDS=-15V,
VGS=-10V,
ID=-6A
IS=-1A, VGS=0V
Ratings
min typ max
-30
-
-
-
-
-1
-
- +100
-1.0 -1.4 -2.0
-
40
50
-
60
76
- 920 1100
- 190
-
- 122
-
-
7.7 11.5
-
5.7 8.5
- 20.2 30
-
9.5
14
-
9.6 11.6
-
2.7 11.6
-
4.5
-
- -0.8 -1.3
Unit
V
uA
nA
V
mΩ
mΩ
pF
nS
nC
V
5/10
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